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MT53E256M16D1DS-046 AAT:B TR

IC DRAM 4GBIT 2.133GHZ WFBGA

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$9.96

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The MT53E256M16D1DS-046 AAT:B TR by Micron Technology Inc. stands out in the memory category for its robust design and adherence to the stringent AEC-Q100 automotive standards, indicating its suitability for high-reliability applications in the automotive sector. This DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) is engineered to meet the demanding requirements for a wide range of automotive applications, where durability and performance under extreme conditions are paramount.

Encapsulated in a compact 200-WFBGA (Ball Grid Array) package that measures 10×14.5 mm, this memory chip features a surface mount design conducive to high-density board layouts. Its operating temperature range of -40°C to 105°C ensures reliability and functionality in a broad spectrum of environmental conditions, making it an ideal choice for temperature-sensitive applications beyond the automotive industry.

With its packaging format being Tape & Reel (TR), this component guarantees ease of handling and integration into automated PCB assembly processes, emphasizing efficiency and minimizing potential damage during the manufacturing process. The MT53E256M16D1DS-046 AAT:B TR is categorized as active, highlighting its ongoing production and availability for new designs and replacements.

In essence, this memory component from Micron Technology Inc. is engineered to address the high-density memory needs of advanced automotive systems, but its characteristics also make it a versatile choice for other high-reliability, temperature-critical applications in industries such as aerospace, industrial automation, and telecommunications infrastructure.

Additional information

Additional Information

Series: Automotive, AEC-Q100
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: 6 week(s)
Product Status: Active
Packaging: Tape & Reel (TR)

Datasheet:

Not Available

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Technical Details:
PackagingTape & Reel (TR)
Package / Case200-WFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)
Voltage - Supply1.1V
TechnologySDRAM - Mobile LPDDR4
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-WFBGA (10x14.5)
Part StatusActive
Write Cycle Time - Word, Page-
Memory Interface-
Memory Organization256M x 16
ProgrammableNot Verified
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