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The MT40A8G4VNE-062H:B TR by Micron Technology Inc. is a high-performance memory component designed to meet the complex requirements of a broad range of industrial applications. This particular part falls within the memory category, offering robust features that ensure reliability and efficiency in data storage and retrieval processes.

Crafted with precision, this memory device operates within a temperature range of 0°C to 95°C (TC), ensuring stable performance across a variety of environmental conditions. The active status of this part signifies its ongoing availability and support for contemporary and future technological requirements.

This component is supplied in a Tape & Reel (TR) packaging format, facilitating automated assembly processes for manufacturers and ensuring safe handling and delivery of the product. This packaging feature is especially beneficial for high-volume production environments, reducing the overall time and cost associated with manual component placement.

While the specific series is not indicated, it’s important to note that Micron Technology Inc. is renowned for its innovation and quality in the memory sector. Their products, including the MT40A8G4VNE-062H:B TR, are integral in applications across multiple industries such as computing, telecommunications, automotive, and consumer electronics. These industries rely heavily on the dependability and advanced technology of memory components to enhance product performance, data integrity, and user experience.

In summary, the MT40A8G4VNE-062H:B TR memory component by Micron Technology Inc. represents a key solution for developers and manufacturers requiring high-efficiency, reliable memory solutions tailored to rigorous industrial applications.

Additional information

Additional Information

RoHS Status: unknown
Manufacturer Lead Time: 28 week(s)
Product Status: Active
Packaging: Tape & Reel (TR)


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Technical Details:
PackagingTape & Reel (TR)
Memory Size32Gbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 95°C (TC)
Voltage - Supply1.14V ~ 1.26V
TechnologySDRAM - DDR4
Clock Frequency1.6 GHz
Memory FormatDRAM
Part StatusActive
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time13.75 ns
Memory Organization8G x 4
ProgrammableNot Verified
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