XP60SL115DR
MOSFET N-CH 600V 28A TO262Manufacturer: YAGEO XSEMI
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 600 V 28A (Tc) 2W (Ta), 178W (Tc) Through Hole TO-262
Additional Information
Series: XP60SL115DRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 178W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5120 pF @ 100 V |
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