XP60SA380DIT
MOSFET N CH 600V 10A TO-220CFM-Manufacturer: YAGEO XSEMI
Categories: Single FETs, MOSFETs
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The YAGEO XSEMI XP60SA380DIT is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) capability of 10A at 25°C (Tc). Its on-resistance (Rds On) is specified at a maximum of 380mOhm at 3.2A and 10V gate drive. Key parameters include a gate charge (Qg) of 36 nC (max) at 10V and input capacitance (Ciss) of 1216 pF (max) at 100V. The device operates within a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 1.92W (Ta) and 31.2W (Tc). This MOSFET is housed in a TO-220CFM package with through-hole mounting. It is suitable for use in power supply units, industrial automation, and renewable energy systems. Manufacturer: YAGEO XSEMI, Series: XP60SA380D, Part Number: XP60SA380DIT.
Additional Information
Series: XP60SA380DRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.92W (Ta), 31.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220CFM |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1216 pF @ 100 V |
| Qualification | - |