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XP10NA011J

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XP10NA011J

MOSFET N-CH 100V 48.5A TO251S

Manufacturer: YAGEO XSEMI

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 48.5A (Tc) 1.13W (Ta), 50W (Tc) Through Hole TO-251S

Additional Information

Series: XS10NA011RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48.5A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.13W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251S
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2288 pF @ 80 V

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