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XC1801SO20I

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XC1801SO20I

Configuration Memory, 1MX1, 45ns, Parallel, CMOS, PDSO20

Manufacturer: Xilinx

Categories: EEPROMs

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The Xilinx XC1801SO20I is a 1M x 1 parallel CMOS configuration memory device. It offers a maximum access time of 45ns and operates within a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V. This component features a memory organization of 1M words by 1 bit, with a total memory density of 1048576 bits. The XC1801 series memory supports synchronous operation and has a data retention time of at least 10 years and an endurance of 10,000 write cycles. Designed for surface mounting, it is housed in a 20-lead PDSO (Small Outline Package) with a terminal pitch of 1.27mm. This device is suitable for applications in industrial automation, telecommunications, and consumer electronics.

Additional Information

Series: XC1801RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.8000
Width7.5000
TechnologyCMOS
Access_Time_Max45.0000000000000000
Additional_FeatureSERIAL MODE ALSO AVAILABLE
Clock_Frequency_Max15.00000
Data_Retention_Time_Min10
Endurance10000.000000000000000
JESD_30_CodeR-PDSO-G20
Memory_Density1048576.0000000000000000
Memory_IC_TypeCONFIGURATION MEMORY
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_Equivalence_CodeSOP20,.4
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Seated_Height_Max2.6500
Standby_Current_Max0.000100000000000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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