E3M0280090D
SICFET N-CH 900V 11.5A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. E-Series N-Channel SiCFET, part number E3M0280090D, offers a 900 V drain-to-source voltage with a continuous drain current of 11.5 A at 25°C. This device features a maximum on-resistance of 364 mOhm at 7.5 A and 15 V Vgs. With a gate charge of 9.5 nC at 15 V, it utilizes Silicon Carbide technology for enhanced performance. The component is housed in a TO-247-3 package with a maximum power dissipation of 54 W. Its operating temperature range is -55°C to 150°C. Qualified to AEC-Q101 standards and designated as Automotive grade, this through-hole mounted FET is suitable for demanding applications in automotive power systems and high-voltage DC-DC converters.
Additional Information
Series: E-SeriesRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 7.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 600 V |
| Qualification | AEC-Q101 |
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