E3M0120090J-TR
SIC, MOSFET, 120M, 900V, TO-263-Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. E Series N-Channel Silicon Carbide MOSFET, part number E3M0120090J-TR, offers 900V drain-source voltage with a continuous drain current of 22A (Tc) at 25°C. This device features a low on-resistance of 155mOhm maximum at 15A, 15V, and a gate charge of 18nC maximum at 15V. The input capacitance (Ciss) is 414pF maximum at 600V. Designed for surface mounting in a TO-263-7 package, it operates within a temperature range of -55°C to 150°C (TJ). With a maximum power dissipation of 83W (Tc), this SiC MOSFET is suitable for applications in electric vehicle powertrains, industrial motor drives, and renewable energy systems.
Additional Information
Series: ERoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -4V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 414 pF @ 600 V |
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