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E3M0120090J

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E3M0120090J

900V 120M AUTOMOTIVE SIC MOSFET

Manufacturer: Wolfspeed, Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Wolfspeed, Inc. E3M0120090J is an N-Channel Silicon Carbide (SiC) MOSFET from the E-Series. This automotive-grade device features a drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 22 A (Tc) at 25°C. The MOSFET exhibits a maximum on-resistance (Rds On) of 155 mOhm at 15 A and 15 V, with a gate charge (Qg) of 18 nC at 15 V. It is packaged in a TO-263-7 surface mount configuration and supports a maximum power dissipation of 83 W (Tc). Key parameters include a gate-source voltage (Vgs) range of +15V to -4V and a threshold voltage (Vgs(th)) of 3.5V at 3mA. This component is suitable for demanding applications in the automotive sector.

Additional Information

Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs155mOhm @ 15A, 15V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id3.5V @ 3mA
Supplier Device PackageTO-263-7
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)+15V, -4V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds414 pF @ 600 V

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