E3M0120090D
SICFET N-CH 900V 23A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. E-Series SiCFET N-Channel E3M0120090D. This device offers a 900V drain-to-source voltage and a continuous drain current of 23A at 25°C (Tc). It features a low on-resistance of 155mOhm maximum at 15A, 15V, with a gate-source voltage range of +18V and -8V. The input capacitance (Ciss) is a maximum of 350pF at 600V, and the gate charge (Qg) is 17.3nC maximum at 15V. Designed for through-hole mounting in a TO-247-3 package, it has a maximum power dissipation of 97W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This automotive-grade component is suitable for high-power applications.
Additional Information
Series: E-SeriesRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 97W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 600 V |