E3M0075120D
1200V AUTOMOTIVE SIC 75MOHM FETManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. E-Series N-Channel SiCFET, part number E3M0075120D, offers a 1200V drain-source voltage and a continuous drain current of 32A at 25°C (Tc). This device features a low on-resistance of 97.5mOhm maximum at 17.9A, 15V, and a maximum gate charge of 57 nC at 15V. Designed for demanding automotive applications, this component is housed in a TO-247-3 package for through-hole mounting. Its maximum power dissipation is 145W (Tc), and it operates across an extended temperature range from -55°C to 175°C (TJ). The gate-source voltage limits are +19V and -8V, with a threshold voltage of 3.6V at 5mA.
Additional Information
Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 97.5mOhm @ 17.9A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 1000 V |
Request a Quote
Clients Also Buy
E3D30065D
DIODE SIL CARB 650V 42A TO247-3
E3M0075120K
1200V AUTOMOTIVE SIC 75MOHM FET
E4D10120A
DIODE SIL CARB 1.2KV 33A TO220-2
