E3M0065090D
SICFET N-CH 900V 35A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. E-Series N-Channel SiCFET, part number E3M0065090D, offers a 900V drain-to-source voltage and 35A continuous drain current at 25°C. This through-hole component features a maximum Rds On of 84.5mOhm at 20A and 15V Vgs. With a gate charge of 30.4 nC at 15V and input capacitance of 660 pF at 600V, this device is designed for high-performance applications. The TO-247-3 package supports a maximum power dissipation of 125W. Operating temperature range is -55°C to 150°C. This automotive-grade component is suitable for demanding power conversion systems.
Additional Information
Series: E-SeriesRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 84.5mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.4 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 600 V |
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