E3M0060065K
60M 650V SIC AUTOMOTIVE MOSFETManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. N-Channel Silicon Carbide (SiC) MOSFET, part number E3M0060065K, offers a 650V drain-to-source voltage rating. This through-hole component, packaged in a TO-247-4L, features a continuous drain current of 37A (Tc) with a maximum power dissipation of 131W (Tc). The Rds On is specified at 79mOhm maximum at 13.2A and 15V gate drive. Key parameters include an input capacitance (Ciss) of 1170pF at 600V and a gate charge (Qg) of 49nC at 15V. Designed for automotive applications, this MOSFET is AEC-Q101 qualified and operates across an extended temperature range of -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 13.2A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 131W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 3.6mA |
| Supplier Device Package | TO-247-4L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 600 V |
| Qualification | AEC-Q101 |
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