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E3M0060065D

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E3M0060065D

60M 650V SIC AUTOMOTIVE MOSFET

Manufacturer: Wolfspeed, Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Wolfspeed, Inc. E3M0060065D is an N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This device features a 650 V drain-source voltage and a continuous drain current of 37 A (Tc) at 25°C, with a maximum power dissipation of 131 W (Tc). The Rds On is specified at 79 mOhm maximum at 13.2 A and 15 V, with a gate-source voltage range of +19 V to -8 V. Key parameters include a maximum gate charge of 46 nC @ 15 V and input capacitance of 1170 pF @ 600 V. Packaged in a TO-247-3 through-hole configuration, this component is qualified to AEC-Q101, making it suitable for automotive applications. It operates across a temperature range of -40°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Rds On (Max) @ Id, Vgs79mOhm @ 13.2A, 15V
FET Feature-
Power Dissipation (Max)131W (Tc)
Vgs(th) (Max) @ Id3.6V @ 3.6mA
Supplier Device PackageTO-247-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)+19V, -8V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1170 pF @ 600 V
QualificationAEC-Q101

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