E3M0045065K
SIC, MOSFET, 45M, 650V, TO-247-4Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. E-Series N-Channel Silicon Carbide MOSFET, part number E3M0045065K. This 650V device features a low Rds(on) of 60mOhm at 17.6A and 15V Vgs, with a continuous drain current of 46A (Tc) and a maximum power dissipation of 150W (Tc). The TO-247-4L package facilitates through-hole mounting. Key specifications include a gate charge of 64 nC and input capacitance of 1593 pF. Operating across a temperature range of -40°C to 175°C (TJ), this AEC-Q101 qualified component is suitable for demanding applications in the automotive sector.
Additional Information
Series: ERoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 17.6A, 15V |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 4.84mA |
| Supplier Device Package | TO-247-4L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1593 pF @ 400 V |
| Qualification | AEC-Q101 |
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