CPMF-1200-S160B
SICFET N-CH 1200V 28A DIEManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. Z-FET™ N-Channel SiCFET, part number CPMF-1200-S160B, is a 1200V, 28A (Tj) device designed for high-performance power applications. This surface mount die offers a maximum continuous drain current of 28A (Tj) and a maximum power dissipation of 202W (Tj). Key parameters include a low on-resistance of 220mOhm @ 10A, 20V, and a gate charge of 47.1 nC @ 20V. The input capacitance (Ciss) is 928 pF @ 800V. This component is suitable for demanding applications across automotive, industrial, and renewable energy sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Z-FET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tj) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 202W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.1 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 928 pF @ 800 V |
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