CPMF-1200-S080B
SICFET N-CH 1200V 50A DIEManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. Z-FET™ CPMF-1200-S080B is an N-Channel Silicon Carbide FET designed for high-voltage, high-performance applications. This die-level component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 50 A (Tj) at 25°C. The device exhibits a maximum on-resistance (Rds On) of 110 mOhm at 20 A and 20 V. Key parameters include a maximum gate charge (Qg) of 90.8 nC at 20 V and input capacitance (Ciss) of 1915 pF at 800 V. The maximum power dissipation is 313 mW (Tj). Operating temperature range is -55°C to 150°C (TJ), with gate-source voltage limits of +25 V and -5 V. This component is suitable for use in power conversion systems, electric vehicle powertrains, and industrial motor drives.
Additional Information
Series: Z-FET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 313mW (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 90.8 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1915 pF @ 800 V |
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