CMF20120D
SICFET N-CH 1200V 42A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. presents the CMF20120D, an N-Channel SiCFET from the Z-FET™ series. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) capability of 42 A at 25°C (Tc), with a maximum power dissipation of 215 W (Tc). The Rds On is specified as a maximum of 110 mOhm at 20 A and 20 V. Key parameters include a gate charge (Qg) of 90.8 nC at 20 V and an input capacitance (Ciss) of 1915 pF at 800 V. The device operates within a junction temperature range of -55°C to 135°C. Packaged in a TO-247-3 through-hole configuration, this SiC MOSFET is suited for demanding applications in power conversion and electric vehicles.
Additional Information
Series: Z-FET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 135°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 90.8 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1915 pF @ 800 V |
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