CMF10120D
SICFET N-CH 1200V 24A TO247Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. CMF10120D is a Silicon Carbide Field Effect Transistor (SiCFET) from the Z-FET™ series. This N-Channel device features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 24 A at 25°C (Tc). The Rds On is specified at a maximum of 220 mOhm at 10A and 20V. With a maximum power dissipation of 134W (Tc), the CMF10120D is housed in a TO-247-3 package and utilizes through-hole mounting. Key parameters include a gate charge (Qg) of 47.1 nC at 20V and an input capacitance (Ciss) of 928 pF at 800V. This component is suitable for applications in electric vehicle charging, industrial power supplies, and solar inverters. The operating temperature range is -55°C to 135°C (TJ).
Additional Information
Series: Z-FET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 135°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.1 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 928 pF @ 800 V |