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CMF10120D

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CMF10120D

SICFET N-CH 1200V 24A TO247

Manufacturer: Wolfspeed, Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Wolfspeed, Inc. CMF10120D is a Silicon Carbide Field Effect Transistor (SiCFET) from the Z-FET™ series. This N-Channel device features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 24 A at 25°C (Tc). The Rds On is specified at a maximum of 220 mOhm at 10A and 20V. With a maximum power dissipation of 134W (Tc), the CMF10120D is housed in a TO-247-3 package and utilizes through-hole mounting. Key parameters include a gate charge (Qg) of 47.1 nC at 20V and an input capacitance (Ciss) of 928 pF at 800V. This component is suitable for applications in electric vehicle charging, industrial power supplies, and solar inverters. The operating temperature range is -55°C to 135°C (TJ).

Additional Information

Series: Z-FET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 135°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs220mOhm @ 10A, 20V
FET Feature-
Power Dissipation (Max)134W (Tc)
Vgs(th) (Max) @ Id4V @ 500µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -5V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs47.1 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds928 pF @ 800 V

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