C3M0280090J
SICFET N-CH 900V 11A D2PAK-7Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0280090J, features a 900V drain-to-source voltage (Vdss) and 11A continuous drain current (Id) at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 360mOhm at 7.5A and 15V gate-source voltage (Vgs). With a maximum power dissipation of 50W (Tc), it is housed in a TO-263-7 (D2PAK-7) surface mount package. Key parameters include a gate charge (Qg) of 9.5 nC at 15V and input capacitance (Ciss) of 150 pF at 600V. The C3M0280090J is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 7.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 600 V |
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