C3M0280090D
SICFET N-CH 900V 11.5A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0280090D, offers a 900 V drain-source voltage and a continuous drain current of 11.5 A at 25°C (Tc). This through-hole component, packaged in a TO-247-3, features a maximum on-resistance of 360 mOhm at 7.5 A and 15 V. Key parameters include a gate charge of 9.5 nC at 15 V and input capacitance of 150 pF at 600 V. The device supports a gate-source voltage range of +18V to -8V and a threshold voltage of 3.5 V at 1.2 mA. With a maximum power dissipation of 54 W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this SiCFET is suitable for applications in power conversion and high-voltage systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 7.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 600 V |
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