C3M0120100K
SICFET N-CH 1000V 22A TO247-4LManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0120100K, offers a 1000 V drain-to-source voltage and continuous drain current of 22 A at 25°C (Tc). This through-hole component is housed in a TO-247-4L package. Key specifications include a maximum Rds On of 155 mOhm at 15 A and 15 V, with a gate charge (Qg) of 21.5 nC at 15 V. Input capacitance (Ciss) is a maximum of 350 pF at 600 V. The device is rated for 83 W (Tc) power dissipation and operates across a temperature range of -55°C to 150°C (TJ). This SiCFET is suitable for high-voltage power conversion applications in industries such as electric vehicles and industrial power supplies.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 600 V |
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