C3M0120100J-TR
SIC, MOSFET, 120M, 1000V, TO-263Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. C3M Series N-Channel Silicon Carbide MOSFET, part number C3M0120100J-TR. This 1000V device offers 22A continuous drain current at 25°C with a maximum power dissipation of 83W. Featuring a low on-resistance of 155mOhm at 15A and 15V, it operates with a 15V maximum gate drive voltage. Key parameters include 414pF maximum input capacitance (Ciss) and 18nC maximum gate charge (Qg). The C3M0120100J-TR is housed in a surface mount D2PAK-7 package and is supplied on Digi-Reel®. This component is suitable for high-voltage power conversion applications in industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -4V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 414 pF @ 600 V |
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