C3M0120090J-TR
SICFET N-CH 900V 22A D2PAK-7Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series SiCFET N-Channel device, part number C3M0120090J-TR. This 900V device features a continuous drain current of 22A at 25°C (Tc) and a maximum power dissipation of 83W (Tc). The Rds On is specified at 155mOhm maximum at 15A and 15V. Key parameters include Vgs(th) of 3.5V (max) at 3mA, a gate charge of 17.3 nC (max) at 15V, and input capacitance (Ciss) of 350 pF (max) at 600V. It is packaged in a TO-263-7 (D2PAK) surface mount configuration and supplied on tape and reel. This component is suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies leveraging Silicon Carbide technology.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 600 V |
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