C3M0120090J
SICFET N-CH 900V 22A D2PAK-7Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0120090J, is a 900 V device in a TO-263-7 (D2PAK-7) surface mount package. This FET offers a continuous drain current of 22A at 25°C (Tc) and a maximum power dissipation of 83W (Tc). Key parameters include a low Rds(on) of 155mOhm at 15A and 15V, an input capacitance (Ciss) of 350 pF at 600V, and a gate charge (Qg) of 17.3 nC at 15V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages up to 15V for optimal Rds(on). Applications for this component are found in high-voltage power conversion systems, including electric vehicle charging, industrial power supplies, and renewable energy inverters.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 600 V |
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