C3M0120090D
SICFET N-CH 900V 23A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. presents the C3M™ series N-Channel SiCFET, part number C3M0120090D. This device offers a 900 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 23 A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 155 mOhm maximum at 15 A and 15 V, this component facilitates efficient power handling with a maximum power dissipation of 97 W (Tc). Key characteristics include a gate charge (Qg) of 17.3 nC maximum at 15 V and input capacitance (Ciss) of 414 pF maximum at 600 V. The gate drive voltage range is specified from 15 V for Rds On, with a maximum gate-source voltage (Vgs) of +18 V and -8 V. The threshold voltage (Vgs(th)) is a maximum of 3.5 V at 3 mA. This through-hole mounted device is packaged in a TO-247-3. Applications include high-voltage power conversion in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 97W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 414 pF @ 600 V |
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