C3M0120065L-TR
SIC, MOSFET, 120M, 650V, TOLL, IManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0120065L-TR, offers a 650 V drain-source voltage with a continuous drain current of 21 A at 25°C. This surface mount device features a maximum on-resistance of 157 mOhm at 6.76 A and 15 V, with a gate charge of 26 nC at 15 V. The C3M0120065L-TR is packaged in an 8-PowerSFN (TOLL) style on tape and reel. Key parameters include a gate drive voltage range of 15 V, a maximum power dissipation of 86 W, and an operating temperature range from -40°C to 175°C. This component is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 157mOhm @ 6.76A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 1.86mA |
| Supplier Device Package | TOLL |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 400 V |