C3M0120065K
650V 120M SIC MOSFETManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-Channel Silicon Carbide MOSFET, part number C3M0120065K. This device features a 650V drain-source breakdown voltage and a continuous drain current of 22A (Tc) at 25°C. The C3M0120065K offers a low on-resistance of 157mOhm maximum at 6.76A and 15V gate drive. Key parameters include a gate charge of 28nC maximum at 15V and an input capacitance of 640pF maximum at 400V. The device is housed in a TO-247-4L package for through-hole mounting and supports a maximum power dissipation of 98W (Tc). Operating temperature range is -40°C to 175°C (TJ). This component is utilized in power conversion applications across industries such as electric vehicles and renewable energy systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 157mOhm @ 6.76A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 98W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 1.86mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 400 V |
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