C3M0120065J-TR
SIC, MOSFET, 120M, 650V, TO-263-Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. C3M0120065J-TR is a 650 V N-channel Silicon Carbide MOSFET. This device features a maximum continuous drain current of 21A (Tc) and a maximum power dissipation of 86W (Tc). The on-resistance (Rds On) is a maximum of 157mOhm at 6.76A and 15V. Key parameters include a gate charge (Qg) of 26 nC @ 15 V and input capacitance (Ciss) of 640 pF @ 400 V. The C3M0120065J-TR is housed in a TO-263-8, D2PAK package suitable for surface mounting and operates across a temperature range of -40°C to 175°C (TJ). This component is commonly utilized in power supply, motor drive, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 157mOhm @ 6.76A, 15V |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 1.86mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 400 V |
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