C3M0120065J
650V 120M SIC MOSFETManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series, part number C3M0120065J, is a 650V N-Channel Silicon Carbide (SiC) MOSFET. This device features a maximum continuous drain current of 21A (Tc) and a maximum on-resistance of 157mOhm at 6.76A and 15V Vgs. The TO-263-7 (TO-263CA) package is designed for surface mount applications, offering a maximum power dissipation of 86W (Tc). Key parameters include a Vgs(th) of 3.6V (Max) @ 1.86mA, a gate charge (Qg) of 26 nC @ 15 V, and an input capacitance (Ciss) of 640 pF (Max) @ 400 V. Operating temperature range is -40°C to 175°C (TJ). This SiCFET is suitable for high-performance applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 157mOhm @ 6.76A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 1.86mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 400 V |
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