C3M0065100K
SICFET N-CH 1000V 35A TO247-4LManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-channel SiCFET, part number C3M0065100K. This device features a 1000V drain-source voltage (Vdss) and 35A continuous drain current (Id) at 25°C. With a maximum on-resistance (Rds On) of 78mOhm at 20A and 15V gate-source voltage, it offers efficient switching performance. The TO-247-4L package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 35 nC at 15V and input capacitance (Ciss) of 660 pF at 600V. Maximum power dissipation is rated at 113.5W (Tc). This component is suitable for applications in power conversion and electric vehicles. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 113.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 600 V |
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