C3M0065100J
SICFET N-CH 1000V 35A D2PAK-7Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0065100J, offers a 1000 V breakdown voltage and 35 A continuous drain current at 25°C (Tc). This surface mount device in a D2PAK-7 package features a maximum Rds(on) of 78 mOhm at 20 A and 15 V. With a gate charge of 35 nC and input capacitance of 660 pF, it is suitable for demanding power applications. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 113.5 W (Tc). Applications include electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 113.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -4V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 600 V |
Request a Quote
Clients Also Buy
C3M0280090J-TR
SICFET N-CH 900V 11A D2PAK-7
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
C3M0120090D
SICFET N-CH 900V 23A TO247-3
