C3M0065090J-TR
SICFET N-CH 900V 35A D2PAK-7Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0065090J-TR, features a Drain-to-Source Voltage (Vdss) of 900V. This device offers a continuous Drain current (Id) of 35A (Tc) and a maximum power dissipation of 113W (Tc). The Rds On is specified at 78mOhm maximum at 20A and 15V. Key characteristics include a gate charge (Qg) of 30 nC maximum at 15V and an input capacitance (Ciss) of 660 pF maximum at 600V. The SiCFET is housed in a TO-263-7 package, suitable for surface mounting. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in high-voltage power conversion applications within the electric vehicle, industrial power supply, and renewable energy sectors.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 600 V |
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