C3M0065090D
SICFET N-CH 900V 36A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C3M™ series N-Channel SiCFET, part number C3M0065090D, offers 900V drain-to-source voltage and 36A continuous drain current at 25°C. This through-hole TO-247-3 packaged device features a maximum Rds On of 78mOhm at 20A, 15V. Key parameters include 30.4 nC gate charge and 660 pF input capacitance. With 125W maximum power dissipation and an operating temperature range of -55°C to 150°C, this component is suitable for high-voltage power conversion applications across industries including industrial power supplies, electric vehicles, and renewable energy systems.
Additional Information
Series: C3M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +18V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.4 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 600 V |
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