C2M1000170J-TR
SICFET N-CH 1700V 5.3A D2PAK-7Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C2M™ Series N-Channel SiCFET, part number C2M1000170J-TR, offers a 1700 V drain-to-source voltage and a continuous drain current of 5.3 A at 25°C (Tc). This surface mount device, packaged in a TO-263-7 (D2PAK-7), features a maximum on-resistance of 1.4 Ohm at 2 A and 20 V drive voltage. The SiCFET technology provides a maximum power dissipation of 78 W (Tc) and has a gate charge (Qg) of 13 nC and input capacitance (Ciss) of 200 pF at 1000 V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in high-voltage power conversion, electric vehicles, and industrial power systems.
Additional Information
Series: C2M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 1000 V |
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