C2M1000170J
SICFET N-CH 1700V 5.3A D2PAKManufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. C2M™ series N-Channel SiCFET, part number C2M1000170J. This device features a 1700 V drain-to-source voltage and a continuous drain current of 5.3 A at 25°C (Tc), with a maximum power dissipation of 78 W (Tc). The Rds On is specified at 1.4 Ohms maximum at 2 A, 20 V. Gate charge (Qg) is 13 nC maximum at 20 V, and input capacitance (Ciss) is 200 pF maximum at 1000 V. The device operates across a temperature range of -55°C to 150°C (TJ) and is packaged in a 7-lead D2PAK (TO-263-7) for surface mounting. Gate drive voltage ranges from -10 V to +25 V, with a threshold voltage (Vgs(th)) of 4 V maximum at 500 µA. This component is suitable for applications in power conversion and electric vehicle charging infrastructure.
Additional Information
Series: C2M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-7 (Straight Leads) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 1000 V |
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