C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. Z-FET™ C2M1000170D is a 1700 V N-Channel SiCFET designed for high-performance power applications. This component offers a continuous drain current of 4.9 A at 25°C (Tc) and a maximum power dissipation of 69 W (Tc). Featuring a low on-resistance of 1.1 Ohm maximum at 2 A and 20 V, it utilizes a TO-247-3 through-hole package. Key parameters include a gate charge of 13 nC at 20 V and input capacitance of 191 pF at 1000 V. The operating temperature range is from -55°C to 150°C (TJ). This device is suitable for demanding applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: Z-FET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 191 pF @ 1000 V |
Request a Quote
Clients Also Buy
C2M0280120D
SICFET N-CH 1200V 10A TO247-3
C2M0160120D
SICFET N-CH 1200V 19A TO247-3
C2M0040120D
SICFET N-CH 1200V 60A TO247-3
