C2M0280120D
SICFET N-CH 1200V 10A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. Z-FET™ C2M0280120D is an N-Channel SiCFET designed for high-voltage applications. This through-hole device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 10 A at 25°C. With a maximum on-resistance (Rds On) of 370 mOhm at 6 A and 20 V, it offers efficient power switching. The gate charge (Qg) is a maximum of 20.4 nC at 20 V, and the input capacitance (Ciss) is 259 pF at 1000 V. The device is packaged in a TO-247-3 configuration and supports a junction temperature range of -55°C to 150°C. This component is suitable for use in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: Z-FET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 6A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1.25mA (Typ) |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 259 pF @ 1000 V |
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