C2M0160120D
SICFET N-CH 1200V 19A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. Z-FET™ C2M0160120D is an N-Channel Silicon Carbide FET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 19 A at 25°C. The device offers a maximum on-resistance (Rds On) of 196 mOhm at 10 A, 20 V. Key parameters include a gate charge (Qg) of 32.6 nC at 20 V and input capacitance (Ciss) of 527 pF at 800 V. The C2M0160120D is packaged in a TO-247-3 through-hole configuration, with a maximum power dissipation of 125 W. Operating temperature ranges from -55°C to 150°C. This SiCFET is utilized in power conversion systems across industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: Z-FET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 800 V |
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