C2M0080170P
SICFET N-CH 1700V 40A TO247-4Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. presents the C2M0080170P, an N-Channel SiCFET from the C2M™ series. This through-hole component features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 40 A at 25°C (Tc), with a maximum power dissipation of 277 W (Tc). The Rds On is specified at 125 mOhm maximum for 28 A and 20 V Vgs. Key parameters include a gate charge (Qg) of 120 nC at 20 V and input capacitance (Ciss) of 2250 pF at 1000 V. The device operates across a temperature range of -55°C to 150°C and is housed in a TO-247-4L package. Applications for this technology are found in high-voltage power conversion, including electric vehicle charging and industrial power supplies.
Additional Information
Series: C2M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 28A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 1000 V |
Request a Quote
Clients Also Buy
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
C2M0045170D
SICFET N-CH 1700V 72A TO247-3
