C2M0080120D
SICFET N-CH 1200V 36A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Wolfspeed, Inc. C2M™ series N-Channel SiCFET, part number C2M0080120D, offers 1200V drain-source voltage and 36A continuous drain current at 25°C (Tc). This through-hole TO-247-3 packaged device features a maximum on-resistance of 98mO at 20A and 20V. With a maximum gate charge of 62nC at 5V and input capacitance of 950pF at 1000V, it is designed for high-performance applications. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 192W (Tc). This component is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: C2M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 1000 V |
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