C2M0045170P
SICFET N-CH 1700V 72A TO247-4Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. presents the C2M0045170P, a C2M™ series N-Channel SiCFET with a Drain-to-Source Voltage (Vdss) of 1700 V. This component offers a continuous drain current (Id) of 72 A at 25°C and a maximum power dissipation of 520 W. Its low on-resistance (Rds On) is 59 mOhm at 50 A and 20 V. Gate charge (Qg) is 188 nC at 20 V, and input capacitance (Ciss) is 3672 pF at 1000 V. The device features a gate-source voltage range of +25 V to -10 V and a threshold voltage (Vgs(th)) of 4 V at 18 mA. Packaged in a TO-247-4L with through-hole mounting, this SiCFET is designed for operation between -40°C and 150°C. Applications include high-voltage power conversion in sectors such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: C2M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 18mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3672 pF @ 1000 V |
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