C2M0045170D
SICFET N-CH 1700V 72A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
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Wolfspeed, Inc. presents the C2M0045170D, an N-Channel SiCFET from the C2M™ series. This component is designed for high-voltage applications, featuring a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 72 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 70 mOhm at 50 A and 20 V, this device offers efficient power switching. The power dissipation capability is rated at 520 W (Tc). Key parameters include a gate charge (Qg) of 188 nC (max) and input capacitance (Ciss) of 3672 pF (max). The operating temperature range is -40°C to 150°C (TJ). Packaged in a TO-247-3 through-hole configuration, this SiCFET is suitable for demanding applications in sectors such as electric vehicles, industrial power supplies, and renewable energy systems. The device supports a gate-source voltage (Vgs) range of +25 V to -10 V.
Additional Information
Series: C2M™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 18mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3672 pF @ 1000 V |
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