C2M0040120D
SICFET N-CH 1200V 60A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Wolfspeed, Inc. C2M0040120D is an N-Channel SiCFET belonging to the Z-FET™ series. This device features a Drain-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 60A at 25°C (Tc), with a maximum power dissipation of 330W (Tc). The on-resistance (Rds On) is specified at 52mOhm maximum at 40A and 20V. Key parameters include a gate charge (Qg) of 115 nC maximum at 20V and input capacitance (Ciss) of 1893 pF maximum at 1000V. It operates with a gate-source voltage range of +25V to -10V and a threshold voltage (Vgs(th)) of 2.8V maximum at 10mA. The component is housed in a TO-247-3 package for through-hole mounting and is suitable for operation across a temperature range of -55°C to 150°C (TJ). This SiC MOSFET is commonly utilized in high-efficiency power conversion applications across industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: Z-FET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1893 pF @ 1000 V |
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