E6D40065H
DIODE SIC 650V TO247Manufacturer: Wolfspeed, Inc.
Categories: Single Diodes
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Wolfspeed, Inc. E Series Silicon Carbide Schottky Diode, part number E6D40065H. This through-hole component offers a 650 V reverse voltage capability and a 109 A average rectified forward current. Featuring low forward voltage drop of 1.5 V at 40 A and a low reverse leakage current of 150 µA at 650 V, this device utilizes advanced Silicon Carbide technology for enhanced performance. The capacitance at 0 V and 1 MHz is 2460 pF. Designed for demanding applications, it operates across a junction temperature range of -55°C to 175°C and is AEC-Q101 qualified, making it suitable for automotive and industrial power conversion systems. The TO-247-2 package provides robust thermal management. This diode exhibits no reverse recovery time above 500 mA.
Additional Information
Series: ERoHS Status: unknownManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2460pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 109A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 40 A |
| Current - Reverse Leakage @ Vr | 150 µA @ 650 V |
| Qualification | AEC-Q101 |
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