E6D10065G
WOLFSPEED SIC, SCHOTTKY DIODEManufacturer: Wolfspeed, Inc.
Categories: Single Diodes
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Wolfspeed, Inc. E Series SiC Schottky Diode, part number E6D10065G. This surface mount device features a 650V reverse voltage capability and a 32A average rectified forward current. The Silicon Carbide Schottky technology provides a low forward voltage drop of 1.5V at 10A and exhibits no reverse recovery time above 500mA. With a junction operating temperature range of -55°C to 175°C, this diode is housed in a TO-263-2 package. The capacitance at Vr, F is specified at 630pF at 0V and 1MHz, with a reverse leakage current of 50µA at 650V. This component is commonly utilized in power factor correction, photovoltaic inverters, and electric vehicle charging applications.
Additional Information
Series: ERoHS Status: unknownManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 630pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 32A |
| Supplier Device Package | TO-263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Qualification | - |
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