E4D20120G
DIODE SIL CARB 1.2KV 56A TO263-2Manufacturer: Wolfspeed, Inc.
Categories: Single Diodes
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Wolfspeed, Inc. E-Series Silicon Carbide Schottky Diode, part number E4D20120G, offers a 1200V reverse voltage and 56A average rectified current. This surface mount TO-263-2 packaged component features a maximum forward voltage of 1.8V at 20A and a low reverse leakage of 200 µA at 1200V. The E4D20120G exhibits no reverse recovery time for currents greater than 500mA, contributing to high efficiency. Operating temperature ranges from -55°C to 175°C. The technology employed is Silicon Carbide (SiC) Schottky. This component finds application in demanding sectors such as automotive and power electronics. Its capacitance at 0V and 1MHz is 1474pF.
Additional Information
Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1474pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 56A |
| Supplier Device Package | TO-263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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