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E4D20120A

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E4D20120A

DIODE SIL CARB 1.2KV 54.5A TO220

Manufacturer: Wolfspeed, Inc.

Categories: Single Diodes

Quality Control: Learn More

Wolfspeed, Inc. E-Series SiC Schottky Diode, part number E4D20120A, offers a 1200V reverse voltage rating and a 54.5A average rectified current. This through-hole component in a TO-220-2 package features a remarkably fast switching speed with zero reverse recovery time above 500mA. The forward voltage drop is 1.8V maximum at 20A, and reverse leakage is 200 µA at 1200V. With a junction operating temperature range of -55°C to 175°C and AEC-Q101 qualification, this device is suitable for demanding applications in the automotive and industrial sectors. Its low capacitance of 1500pF at 0V and 1MHz contributes to efficient high-frequency operation.

Additional Information

Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1500pF @ 0V, 1MHz
Current - Average Rectified (Io)54.5A
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 20 A
Current - Reverse Leakage @ Vr200 µA @ 1200 V
QualificationAEC-Q101

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