E4D02120E-TR
DIODE SIL CARB 1.2KV 8A TO252-2Manufacturer: Wolfspeed, Inc.
Categories: Single Diodes
Quality Control: Learn More
Wolfspeed, Inc. SiC Schottky Diode, part number E4D02120E-TR, offers 1200V reverse voltage with a maximum forward voltage of 1.8V at 2A. This component features an average rectified current handling capability of 8A and a low reverse leakage of 50 µA at 1200V. Designed for surface mount applications within a TO-252-2 package, it operates across a wide junction temperature range of -55°C to 175°C. The SiC technology provides superior performance characteristics, including extremely fast switching speeds with no significant reverse recovery time above 500mA. Its AEC-Q101 qualification makes it suitable for demanding automotive applications. The capacitance at 0V and 1MHz is 153pF. This device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-2 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 153pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
CSD02060G
DIODE SIL CARB 600V 3.5A TO263-2
C4D10120E-TR
DIODE SIL CARB 1.2KV 33A TO252-2
C6D04065A
DIODE SIL CARB 650V 18A TO220-2
