E3D08065G-TR
SIC, SCHOTTKY DIODE, 8A, 650V, TManufacturer: Wolfspeed, Inc.
Categories: Single Diodes
Quality Control: Learn More
Wolfspeed, Inc. E-Series SiC Schottky Diode, part number E3D08065G-TR, offers robust performance with a 650V reverse voltage rating and a 22A average rectified forward current. This TO-263-2 surface mount component features a low forward voltage of 1.8V at 8A and a minimal reverse leakage of 51 µA at 650V. The device exhibits no recovery time above 500mA, making it ideal for high-frequency switching applications. With an operating junction temperature range of -55°C to 175°C and an automotive grade, this SiC Schottky diode is well-suited for power supply, motor drive, and EV charging applications. The component is supplied in tape and reel packaging.
Additional Information
Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 369pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 22A |
| Supplier Device Package | TO-263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 51 µA @ 650 V |
Request a Quote
Clients Also Buy
E3D30065D
DIODE SIL CARB 650V 42A TO247-3
E3M0075120K
1200V AUTOMOTIVE SIC 75MOHM FET
E4D10120A
DIODE SIL CARB 1.2KV 33A TO220-2
